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| SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. KMA3D0N20SA N-Ch Trench MOSFET L E B L FEATURES A H 2 G 1 3 VDSS=20V, ID=3A Drain-Source ON Resistance RDS(ON)=60m (Max.) @ VGS=4.5V RDS(ON)=120m (Max.) @ VGS=2.5V Super Hige Dense Cell Design P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N K M SOT-23 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed Drain-Source-Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range ) SYMBOL VDSS VGSS ID IDP IS PD 0.8 Tj Tstg RthJA 150 -55 150 100 /W N-Ch 20 10 3 A 12 1.25 1.25 W A UNIT V V KNB Thermal Resistance, Junction to Ambient Note : Surface Mounted on FR4 Board, t 10sec. PIN CONNECTION (TOP VIEW) D 3 3 2 1 2 1 G S 2007. 4. 17 Revision No : 0 J D 1/5 KMA3D0N20SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delat Time Turn-On Rise Time Turn-On Deley Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 VSDF* VGS=0V, IDR=1.25A 0.81 1.2 V Ciss Coss Crss Qg* Qgs* Qgd* td(on)* tr* td(off)* tr* VDD=10V, VGS=4.5V ID=1A, RG=6 (NOTE 1) ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL BVDSS IDSS IGSS Vth RDS(ON)* IDS=250 A, VGS=0V, VGS=0V, VDS=16V VGS= 10V, VDS=0V 20 0.5 8 - 0.8 50 90 6 1 100 1.5 60 V A nA V m VDS=VGS, ID=250 A VGS=4.5V, ID=2.5A VGS=2.5V, ID=1A 120 A S ID(ON)* gfs* VGS=4.5V, VDS=5V VDS=5V, ID=2.5A VDS=10V, VGS= 0V, f=1MHz, VDS=10V, VGS=4.5V, ID=2.5A - 330 110 60 4.7 1.6 1.3 9.2 6.8 6.1 8.3 ns nC pF , Duty cycle < 2% 2007. 4. 17 Revision No : 0 2/5 KMA3D0N20SA Fig1. ID 12 10V,3V,2.8V,2.6V - VDS Drain Source On Resistance RDS(ON) () Common Source Tc=25 C Pulse Test Fig2. RDS(on) - ID 200 Common Source Tc=25 C Pulse Test Drain Current ID (A) 2.4V 8 2.2V 100 VGS=4.5V VGS=10V 4 VGS=2.0V 0 0 2 4 6 8 10 0 0 4 8 12 16 Drain - Source Voltage VDS (V) Drain - Current ID (A) Fig3. ID 12 Common Source - VGS Fig4. RDS(on) - Tj 80 Common Source Drain Current ID (A) VDS=5V Pulse Test Normalized Drain-Source On-Resistance RDS(ON) (m) VGS=4.5V, ID=2.5A Pulse Test 60 8 40 25 C 4 125 C -55 C 20 0 0 1 2 3 4 5 0 -75 -50 -25 0 25 50 75 100 125 150 Gate Source Volatage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 Common Source 10 8 6 4 2 0 0 0.4 Fig6. IS - VSDF Common Source Tc= 25 C Pulse Test 3 2 1 0 -75 -50 -25 0 25 50 75 100 125 150 Drain Current ID (A) VGS=VDS ID=250A 4 Pulse Test 0.8 1.2 1.6 2.0 Junction Temperature Tj ( C ) Source - Drain Forward Voltage VSDF (V) 2007. 4. 17 Revision No : 0 3/5 KMA3D0N20SA Fig7. Transient Thermal Response Curve NORMALIZED TRANSIENT THERMAL RESISTANCE 1 0.1 PDM t1 t2 - Duty = t/T 0.01 10-4 10-3 10-2 10-1 100 10 102 103 TIME t (sec) Fig8. Safe Operation Area 10 RDS(ON)LIMIT 10 ms 100 ms 1s DC Drain Current ID (A) 1 0.1 VGS= 4.5V SINGLE PULSE TA= 25 C 0.03 0.1 1 10 20 50 Drain - Source Voltage VDS (V) 2007. 4. 17 Revision No : 0 4/5 KMA3D0N20SA Fig9. Gate Charge Circuit and Wave Form VGS 10 V Schottky Diode ID 0.5 VDSS ID 1.0 mA VDS VGS Q Qgs Qgd Qg Fig10. Resistive Load Switching RL VDS 90% 0.5 VDSS 6 VDS 10 V VGS 10% td(on) td(off) VGS tr ton tf toff 2007. 4. 17 Revision No : 0 5/5 |
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